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arXiv · 1511.08601

Ballistic transport exceeding 28 \mu m in CVD grown graphene

Luca Banszerus·Michael Schmitz·Stephan Engels·Matthias Goldsche·Kenji Watanabe·Takashi Taniguchi·Bernd Beschoten·Christoph Stampfer
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Abstract

We report on ballistic transport over more than 28 \mu m in graphene grown by chemical vapor deposition (CVD) that is fully encapsulated in hexagonal boron nitride. The structures are fabricated by an advanced dry van-der-Waals transfer method and exhibit carrier mobilities of up to three million cm$^2$/(Vs). The ballistic nature of charge transport is probed by measuring the bend resistance in cross- and square-shaped devices. Temperature dependent measurements furthermore prove that ballistic transport is maintained exceeding 1 \mu m up to 200 K.

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Luca Banszerus, Michael Schmitz, Stephan Engels, Matthias Goldsche, Kenji Watanabe, Takashi Taniguchi, Bernd Beschoten, Christoph Stampfer. 2015-11-27. Ballistic transport exceeding 28 \mu m in CVD grown graphene. https://doi.org/10.1021/acs.nanolett.5b04840

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