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arXiv · 1512.00667

Linear magnetoresistance in compensated graphene bilayer

G. Yu. Vasileva·D. Smirnov·Yu. L. Ivanov·Yu. B. Vasilyev·P. S. Alekseev·A. P. Dmitriev·I. V. Gornyi·V. Yu. Kachorovskii·M. Titov·B. N. Narozhny·R. J. Haug
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Abstract

We report a nonsaturating linear magnetoresistance in charge-compensated bilayer graphene in a temperature range from 1.5 to 150 K. The observed linear magnetoresistance disappears away from charge neutrality ruling out the traditional explanation of the effect in terms of the classical random resistor network model. We show that experimental results qualitatively agree with a phenomenological two-fluid model taking into account electron-hole recombination and finite-size sample geometry.

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G. Yu. Vasileva, D. Smirnov, Yu. L. Ivanov, Yu. B. Vasilyev, P. S. Alekseev, A. P. Dmitriev, I. V. Gornyi, V. Yu. Kachorovskii, M. Titov, B. N. Narozhny, R. J. Haug. 2015-12-02. Linear magnetoresistance in compensated graphene bilayer. https://doi.org/10.1103/physrevb.93.195430

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