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arXiv · 1512.01677

Strong-Field Resonant Dynamics in Semiconductors

Michael S. Wismer·Stanislav Yu. Kruchinin·Marcelo Ciappina·Mark I. Stockman·Vladislav S. Yakovlev
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Abstract

We predict that a direct bandgap semiconductor (GaAs) resonantly excited by a strong ultrashort laser pulse exhibits a novel regime: kicked anharmonic Rabi oscillations (KARO). In this regime, Rabi oscillations are strongly coupled to intraband motion, and interband transitions mainly take place during short times when electrons pass near the Brillouin zone center where electron populations undergo very rapid changes. Asymmetry of the residual population distribution induces an electric current controlled by the carrier-envelope phase. The predicted effects are experimentally observable using photoemission and terahertz spectroscopies.

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Michael S. Wismer, Stanislav Yu. Kruchinin, Marcelo Ciappina, Mark I. Stockman, Vladislav S. Yakovlev. 2015-12-05. Strong-Field Resonant Dynamics in Semiconductors. https://doi.org/10.1103/physrevlett.116.197401

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