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arXiv · 1512.01762

On the origin of near infrared photoluminescence in Bismuth-doped aluminosilicate glass

O. V. Laguta·B. I. Denker·B. I. Galagan·S. E. Sverchkov·I. M. Razdobreev
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Abstract

The near infrared (NIR) photoluminescence (PL) in Bismuth-doped aluminosilicate glasses was reported about of 16 years ago. Although it has since been developed various kinds of fiber lasers and amplifiers based on the Bismuth-doped silica glasses, the main problem, namely the nature of NIR PL, remains unsolved. Here we show that this famous NIR PL in Bismuth-doped aluminosilicate glass originates from the defect, most probably positively charged oxygen vacancy V$_{O}^{2+}$ in the glass network. This defect interacts with Bi$^+$ ion in its environment via the energy transfer.

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O. V. Laguta, B. I. Denker, B. I. Galagan, S. E. Sverchkov, I. M. Razdobreev. 2015-12-08. On the origin of near infrared photoluminescence in Bismuth-doped aluminosilicate glass. https://arxiv.org/abs/1512.01762

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