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arXiv · 1512.03028

Twist-controlled Resonant Tunnelling between Monolayer and Bilayer Graphene

Thomas L M Lane·John R Wallbank·Vladimir I Fal'ko
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Abstract

We investigate the current-voltage characteristics of a field-effect tunnelling transistor comprised of both monolayer and bilayer graphene with well-aligned crystallographic axes, separated by three layers of hexagonal boron nitride. Using a self-consistent description of the device's electrostatic configuration we relate the current to three distinct tunable voltages across the system and hence produce a two-dimensional map of the I-V characteristics in the low energy regime. We show that the use of gates either side of the heterostructure offers a fine degree of control over the device's rich array of characteristics, as does varying the twist between the graphene electrodes.

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Thomas L M Lane, John R Wallbank, Vladimir I Fal'ko. 2015-12-09. Twist-controlled Resonant Tunnelling between Monolayer and Bilayer Graphene. https://doi.org/10.1063/1.4935988

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