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arXiv · 1512.03820

Narrow-linewidth homogeneous optical emitters in diamond nanostructures via silicon ion implantation

Ruffin E. Evans·Alp Sipahigil·Denis D. Sukachev·Alexander S. Zibrov·Mikhail D. Lukin
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Abstract

The negatively-charged silicon-vacancy ($\mathrm{SiV}^{-}$) center in diamond is a bright source of indistinguishable single photons and a useful resource in quantum information protocols. Until now, $\mathrm{SiV}^{-}$ centers with narrow optical linewidths and small inhomogeneous distributions of $\mathrm{SiV}^{-}$ transition frequencies have only been reported in samples doped with silicon during diamond growth. We present a technique for producing implanted $\mathrm{SiV}^{-}$ centers with nearly lifetime-limited optical linewidths and a small inhomogeneous distribution. These properties persist after nanofabrication, paving the way for incorporation of high-quality $\mathrm{SiV}^{-}$ centers into nanophotonic devices.

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Ruffin E. Evans, Alp Sipahigil, Denis D. Sukachev, Alexander S. Zibrov, Mikhail D. Lukin. 2016-04-25. Narrow-linewidth homogeneous optical emitters in diamond nanostructures via silicon ion implantation. https://doi.org/10.1103/physrevapplied.5.044010

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