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arXiv · 1512.04191

Weak antilocalization and electron-electron interaction in coupled multiple-channel transport in a Bi$_2$Se$_3$ thin film

Yumei Jing·Shaoyun Huang·Kai Zhang·Jinxiong Wu·Yunfan Guo·Hailin Peng·Zhongfan Liu·H. Q. Xu
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Abstract

Electron transport properties of a topological insulator Bi$_2$Se$_3$ thin film are studied in Hall-bar geometry. The film with a thickness of 10 nm is grown by van der Waals epitaxy on fluorophlogopite mica and Hall-bar devices are fabricated from the as-grown film directly on the mica substrate. Weak antilocalization and electron-electron interaction effects are observed and analyzed at low temperatures. The phase-coherence length extracted from the measured weak antilocalization characteristics shows a strong power-law increase with decreasing temperature and the transport in the film is shown to occur via coupled multiple (topological surface and bulk states) channels. The conductivity of the film shows a logarithmically decrease with decreasing temperature and thus the electron-electron interaction plays a dominant role in quantum corrections to the conductivity of the film at low temperatures.

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Yumei Jing, Shaoyun Huang, Kai Zhang, Jinxiong Wu, Yunfan Guo, Hailin Peng, Zhongfan Liu, H. Q. Xu. 2015-12-14. Weak antilocalization and electron-electron interaction in coupled multiple-channel transport in a Bi$_2$Se$_3$ thin film. https://doi.org/10.1039/c5nr07296d

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