Dispersion coefficients for the interaction of Cs atom with different material media

Abstract

Largely motivated by a number of applications, the dispersion ($C_3$) coefficients for the interaction of a Cs atom with different material media such as Au (metal), Si (semiconductor) and various dielectric surfaces like SiO$_2$, SiN$_{\rm{x}}$, sapphire and YAG are determined using accurate values of the dynamic polarizabilities of the Cs atom obtained employing the relativistic coupled-cluster approach and the dynamic dielectric constants of the walls. Moreover, we also give the retardation coefficients in the graphical representation as functions of separation distances to describe the interaction potentials between the Cs atom with the above considered material media. For the easy access to the interaction potentials at a given distance of separation, we devise a simple working functional fitting form for the retarded coefficients in terms of two parameters that are quoted for each medium.