arXiv · 1601.00542
Resonance-enhanced waveguide-coupled silicon-germanium detector
Abstract
A photodiode with 0.55$\pm$0.1 A/W responsivity at a wavelength of 1176.9 nm has been fabricated in a 45 nm microelectronics silicon-on-insulator foundry process. The resonant waveguide photodetector exploits carrier generation in silicon-germanium (SiGe) within a microring which is compatible with high-performance electronics. A 3 dB bandwidth of 5 GHz at -4 V bias is obtained with a dark current of less than 20 pA.
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Luca Alloatti, Rajeev Jagga Ram. 2016-01-04. Resonance-enhanced waveguide-coupled silicon-germanium detector. https://doi.org/10.1063/1.4941995
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