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arXiv · 1601.01540

Slow light in semiconductor quantum dots: effects of non-Markovianity and correlation of dephasing reservoirs

D. Mogilevtsev·E. Reyes-Gomez·S. B. Cavalcanti·L. E. Oliveira
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Abstract

A theoretical investigation on slow light propagation based on eletromagnetically induced transparency in a three-level quantum-dot system is performed including non-Markovian effects and correlated dephasing reservoirs. It is demonstraonated that the non-Markovian nature of the process is quite essential even for conventional dephasing typical of quantum dots leading to significant enhancement or inhibition of the group velocity slow-down factor as well as to the shifting and distortion of the transmission window. Furthermore, the correlation between dephasing reservoirs may also either enhance or inhibit non-Markovian effects.

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D. Mogilevtsev, E. Reyes-Gomez, S. B. Cavalcanti, L. E. Oliveira. 2016-01-07. Slow light in semiconductor quantum dots: effects of non-Markovianity and correlation of dephasing reservoirs. https://arxiv.org/abs/1601.01540

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