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arXiv · 1601.02466

Interplay between nanometer-scale strain variations and externally applied strain in graphene

G. J. Verbiest·C. Stampfer·S. E. Huber·M. Andersen·K. Reuter
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Abstract

We present a molecular modeling study analyzing nanometer-scale strain variations in graphene as a function of externally applied tensile strain. We consider two different mechanisms that could underlie nanometer-scale strain variations: static perturbations from lattice imperfections of an underlying substrate and thermal fluctuations. For both cases we observe a decrease in the out-of-plane atomic displacements with increasing strain, which is accompanied by an increase in the in-plane displacements. Reflecting the non-linear elastic properties of graphene, both trends together yield a non-monotonic variation of the total displacements with increasing tensile strain. This variation allows to test the role of nanometer-scale strain variations in limiting the carrier mobility of high-quality graphene samples.

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G. J. Verbiest, C. Stampfer, S. E. Huber, M. Andersen, K. Reuter. 2016-05-27. Interplay between nanometer-scale strain variations and externally applied strain in graphene. https://doi.org/10.1103/physrevb.93.195438

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