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arXiv · 1601.04942

Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar planes: the effect of stacking faults in the reduction of the internal electric field

J. A. Budagosky·N. Garro·A. Cros·A. García-Cristóbal·S. Founta·B. Daudin
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Abstract

The optical emission of non-polar GaN/AlN quantum dots has been investigated. The presence of stacking faults inside these quantum dots is evidenced in the dependence of the photoluminescence with temperature and excitation power. A theoretical model for the electronic structure and optical properties of non-polar quantum dots, taking into account their realistic shapes, is presented which predicts a substantial reduction of the internal electric field but a persisting quantum confined Stark effect, comparable to that of polar GaN/AlN quantum dots. Modeling the effect of a 3 monolayer stacking fault inside the quantum dot, which acts as zinc-blende inclusion into the wurtzite matrix, results in an additional 30 % reduction of the internal electric field and gives a better account of the observed optical features.

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J. A. Budagosky, N. Garro, A. Cros, A. García-Cristóbal, S. Founta, B. Daudin. 2016-01-19. Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar planes: the effect of stacking faults in the reduction of the internal electric field. https://arxiv.org/abs/1601.04942

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