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arXiv · 1601.05559

A microwave field-driven transistor-like skyrmionic device with the microwave current-assisted skyrmion creation

Jing Xia·Yangqi Huang·Xichao Zhang·Wang Kang·Chentian Zheng·Xiaoxi Liu·Weisheng Zhao·Yan Zhou
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Abstract

Magnetic skyrmion is a topologically protected domain-wall structure at nanoscale, which could serve as a basic building block for advanced spintronic devices. Here, we propose a microwave field-driven skyrmionic device with the transistor-like function, where the motion of a skyrmion in a voltage-gated ferromagnetic nanotrack is studied by micromagnetic simulations. It is demonstrated that the microwave field can drive the motion of a skyrmion by exciting propagating spin waves, and the skyrmion motion can be governed by a gate voltage. We also investigate the microwave current-assisted creation of a skyrmion to facilitate the operation of the transistor-like skyrmionic device on the source terminal. It is found that the microwave current with an appropriate frequency can reduce the threshold current density required for the creation of a skyrmion from the ferromagnetic background. The proposed transistor-like skyrmionic device operated with the microwave field and current could be useful for building future skyrmion-based circuits.

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Jing Xia, Yangqi Huang, Xichao Zhang, Wang Kang, Chentian Zheng, Xiaoxi Liu, Weisheng Zhao, Yan Zhou. 2016-01-21. A microwave field-driven transistor-like skyrmionic device with the microwave current-assisted skyrmion creation. https://doi.org/10.1063/1.4999013

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