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arXiv · 1601.06728

Topological nature of in-gap bound states in disordered large-gap monolayer transition metal dichalcogenides

Fanyao Qu·L. Villegas-Lelovsky·G. S. Diniz
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Abstract

We propose a physical model based on disordered (a hole punched inside a material) monolayer transition metal dichalcogenides (TMDs) to demonstrate a large-gap quantum valley Hall insulator. We find an emergence of bound states lying inside the bulk gap of the TMDs. They are strongly affected by spin-valley coupling, rest- and kinetic- mass terms and the hole size. In addition, in the whole range of the hole size, at least two in-gap bound states with opposite angular momentum, circulating around the edge of the hole, exist. Their topological insulator (TI) feature is analyzed by the Chern number, characterized by spacial distribution of their probabilities and confirmed by energy dispersion curves (Energy vs. angular momentum). It not only sheds light on overcoming low-temperature operating limitation of existing narrow-gap TIs, but also opens an opportunity to realize valley- and spin- qubits.

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Fanyao Qu, L. Villegas-Lelovsky, G. S. Diniz. 2016-01-25. Topological nature of in-gap bound states in disordered large-gap monolayer transition metal dichalcogenides. https://doi.org/10.1002/pssr.201600029

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