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arXiv · 1602.07524

Microwave-induced resistance oscillations as a classical memory effect

Y. M. Beltukov·M. I. Dyakonov
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Abstract

By numerical simulations and analytical studies, we show that the phenomenon of microwave-induced resistance oscillations can be understood as a classical memory effect caused by re-collisions of electrons with scattering centers after a cyclotron period. We develop a Drude-like approach to magneto-transport in presence of a microwave field, taking account of memory effects, and find an excellent agreement between numerical and analytical results, as well as a qualitative agreement with experiment.

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Y. M. Beltukov, M. I. Dyakonov. 2016-04-14. Microwave-induced resistance oscillations as a classical memory effect. https://doi.org/10.1103/physrevlett.116.176801

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