Electric Field-Induced Second Order Nonlinear Optical Effects in Silicon Waveguides

Abstract

The demand for nonlinear effects within a silicon platform to support photonic circuits requiring phase-only modulation, frequency doubling, and/or difference frequency generation, is becoming increasingly clear. However, the symmetry of the silicon crystal inhibits second order optical nonlinear susceptibility, $χ^{(2)}$. Here, we show that the crystalline symmetry is broken when a DC field is present, inducing a $χ^{(2)}$ in a silicon waveguide that is proportional to the large $χ^{(3)}$ of silicon. First, Mach-Zehnder interferometers using the DC Kerr effect optical phase shifters in silicon ridge waveguides with p-i-n junctions are demonstrated with a $V_πL$ of $2.4Vcm$ in telecom bands $(λ_ω=1.58μm)$ without requiring to dope the silicon core. Second, the pump and second harmonic modes in silicon ridge waveguides are quasi-phase matched when the magnitude, spatial distribution of the DC field and $χ^{(2)}$ are controlled with p-i-n junctions. Using these waveguides, second harmonic generation at multiple pump wavelengths are observed with a maximum efficiency of $P_{2ω}/P_ω^2$=12%/W at $λ_ω=2.29μm$ in a 1mm long waveguide. This corresponds to a field-induced $χ^{(2)}=41pm/V$, comparable to non-centrosymmetric media (LiNbO3, GaAs, GaN). The field-induced nonlinear silicon photonics will lead to a new class of CMOS compatible integrated devices spanning from near to mid infrared spectrum.