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arXiv · 1603.05156

Continuous-wave and Transient Characteristics of Phosphorene Microwave Transistors

Xi Luo·Kuanchen Xiong·James C. M. Hwang·Yuchen Du·PeiDe Ye
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Abstract

Few-layer phosphorene MOSFETs with 0.3-um-long gate and 15-nm-thick Al2O3 gate insulator was found to exhibit a forward-current cutoff frequency of 2 GHz and a maximum oscillation frequency of 8 GHz after de-embedding for the parasitic capacitance associated mainly with the relatively large probe pads. The gate lag and drain lag of the transistor was found to be on the order of 1 us or less, which is consistent with the lack of hysteresis, carrier freeze-out or persistent photoconductivity in DC characteristics. These results confirm that the phosphorene MOSFET can be a viable microwave transistor for both small-signal and large-signal applications.

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Xi Luo, Kuanchen Xiong, James C. M. Hwang, Yuchen Du, PeiDe Ye. 2016-03-16. Continuous-wave and Transient Characteristics of Phosphorene Microwave Transistors. https://doi.org/10.1109/mwsym.2016.7540290

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