Topologically induced fractional Hall steps in the integer quantum Hall regime of $MoS_2$

SK Firoz Islam; Colin Benjamin

doi:10.1088/0957-4484/27/38/385203

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arXiv · 1604.05007

Topologically induced fractional Hall steps in the integer quantum Hall regime of $MoS_2$

SK Firoz Islam·Colin Benjamin

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Abstract

The quantum magnetotransport properties of a monolayer of molybdenum disulfide are derived using linear response theory. Especially, the effect of topological terms on longitudinal and Hall conductivity is analyzed. The Hall conductivity exhibits fractional steps in the integer quantum Hall regime. Further complete spin and valley polarization of the longitudinal conductivity is seen in presence of these topological terms. Finally, the Shubnikov-de Hass oscillations are suppressed or enhanced contingent on the sign of these topological terms.

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SK Firoz Islam, Colin Benjamin. 2016-07-14. Topologically induced fractional Hall steps in the integer quantum Hall regime of $MoS_2$. https://doi.org/10.1088/0957-4484%2F27%2F38%2F385203

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