Searcharxiv⌕ Search
Home/Archive/arXiv

arXiv · 1604.07508

Development of Gold Tiny Particles and Particles in Different Sizes at Varying Precursor Concentration

Mubarak Ali·I-Nan Lin
View original source ↗Read source document ↗Export metadata ↓

Abstract

Coalescence (or Growth) of tiny particles to larger particles has been an exciting and practical research topic in nanotechnology. This study deals with development of gold particles at varying precursor concentration in a custom-built setup. Under the tuned ratio of bipolar pulse OFF to ON time, tiny particles of different sizes and shapes develop depending on the amount of gold precursor. When compact monolayer assembly is formed on solution surface, nano energy in packet shapes bind gold atoms in own shape. Between 0.07 mM to 0.90 mM precursor concentration, tiny particles develop in both triangular and non-triangular shapes. Tiny particles of triangular shape develop in a large number at precursor concentration 0.30 mM and 0.60 mM. Hence, nanoparticles and particles also developed in different geometrical shapes. Such tiny particles pack due to the exerted force in immersing format, where made structures of smooth elements assemble to develop nanoparticles and particles of different shapes. Tiny particles of non-geometrical shapes do not assemble at a common point and their assembling develops a nanoparticle or particle of distorted or spherical shape. This occurs mainly when precursor concentration is 0.05 mM and 1.20 mM. At 50 sccm Argon flow rate, nanoparticles and particles develop in the same shapes as in case of 100 sccm. For different precursor concentrations, different colors of solutions indicate different features of nanoparticles and particles. This study clarifies the necessary concentration of precursor to develop colloids of different sizes.

Explore related subjects

cond-mat.mtrl-sci

Keep this discovery

BibTeXRIS

Mubarak Ali, I-Nan Lin. 2016-04-26. Development of Gold Tiny Particles and Particles in Different Sizes at Varying Precursor Concentration. https://doi.org/10.1088/2043-6254%2Fab6cfb

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

arXiv2026

Measuring chiral phonons

Chiral phonons are quantized vibrations where the atomic motion in a solid breaks improper rotation symmetries. In many cases, chiral phonons possess angular momenta and are therefore selective to circularly polarized light. Both fundamental and applied research efforts on chiral phonons have been gaining increasing attention owing to their importance in a variety of fields including spintronics, spin-selective chemical reactions, thermal transport, quantum information processing and biosensing, where the bi-directional spin-lattice coupling enabled by chiral phonons can be harnessed in new ways, and potentially lead to new functionalities. Thus far, the studies of chiral phonons across diverse materials platforms have evolved largely independently within these fields, but the experimental techniques are often interrelated. In this perspective, we present a detailed description, as well as advantages and disadvantages of the current approaches for experimentally measuring chiral phonons in chiral and achiral materials. We conclude with a discussion of new methods for measuring chiral phonons. Ultimately, this work seeks to offer an experimental guide for systematically investigating the properties of chiral phonons in various materials systems and applications.

cond-mat.mtrl-sci↗
arXiv2026

A model of grain growth in UN integrating molecular dynamics, phase-field modeling, and uncertainty quantification

Grain growth kinetics and grain-boundary (GB) properties in uranium mononitride (UN) are investigated through an integrated multiscale framework combining molecular dynamics (MD), phase-field modeling, and surrogate-assisted uncertainty quantification. MD simulations yield GB energies for 27 symmetric tilt boundaries from 0--2000~K, which are consistent with available DFT values. The average GB energy is nearly temperature-independent below 1000~K and increases at higher temperatures. A mechanistic pore-drag model applied to the only available grain growth dataset for actinide nitrides yields a mobility reduction factor of $s \approx 0.93$--$0.99$, statistically indistinguishable from unity, confirming that pore drag is negligible under the experimental conditions. The intrinsic GB mobility is therefore extracted directly from the effective mobility, yielding $M_0 = 2.05\times10^{-15}$~m$^4$/(J$\cdot$s) and $Q_M = 0.89$~eV. Phase-field simulations conducted from 1500--2000~K confirm normal curvature-driven grain growth, with grain size distributions converging to the Hillert-like form. A surrogate-assisted global sensitivity analysis---combining principal component analysis, Gaussian process regression, and Sobol decomposition---reveals that the mobility prefactor $M_0$ dominates output variance at all times, followed by the activation energy $Q_M$, while the GB energy $\gamma$ contributes minimally. These results establish the first quantitative grain growth framework for UN and identify the reduction of uncertainty in $M_0$ and $Q_M$ as the highest-priority target for future experimental efforts.

cond-mat.mtrl-sci↗
arXiv2026

Silicon Solar Cell Design for >30% Efficiency via Singlet Fission

Singlet fission (SF) materials convert high-energy photons into multiple charge carriers, providing a route to exceed the efficiency limits of single-junction silicon solar cells without many of the complexities of multi-junction tandem designs. Following the first demonstration of an SF-enhanced silicon solar cell in 2025, there is a need to understand how SF materials can be effectively integrated into high-efficiency industrial silicon devices and translated from proof of concept to a manufacturable technology. Using coupled optical and electrical simulations, we assess the efficiency potential of several industrially relevant silicon cell architectures combined with SF materials. Interdigitated back-contact (IBC) cells offer the greatest potential for improvement due to unrestricted front-surface access and can achieve efficiencies exceeding 33%. However, performance is highly sensitive to front-surface passivation quality. Appropriate silicon design, particularly controlled surface doping and fixed interfacial charge, can mitigate recombination losses and relax passivation requirements for ultra-thin exciton-transfer layers.

cond-mat.mtrl-sci↗