SearcharxivSearch

arXiv · 1604.07950

Collective spin excitations in bi-component magnonic crystals consisting of bi-layer Permalloy/Fe nanowires

Abstract

In the developing field of magnonics,it is very important to achieve tailoring of spin wave propagation by both a proper combination of materials with different magnetic properties and their nanostructuring on the submicrometric scale. We have exploited deep ultra-violet lithography, in combination with tilted shadow deposition technique, to fabricate arrays of closely spaced bi-layer nanowires (NWs), with separation d=100 nm and periodicity a=440 nm, having bottom and top layers made of Permalloy and Iron, respectively. The NWs have either rectangular cross section (bottom and upper layers of equal width) or L-shaped cross section (upper layer of half width). The frequency dispersion of collective spin wave excitations in the above bi-layered NWs arrays has been measured by the Brillouin light scattering technique while sweeping the wave vector perpendicularly to the wire length over three Brillouin zones of the reciprocal space. For the rectangular NWs, the lowest frequency fundamental mode, characterized by a quasi- uniform profile of the amplitude of the dynamic magnetization across the NW width, exhibits a sizeable and periodic frequency dispersion. A similar dispersive mode is also present in L-shaped NWs, but the mode amplitude is concentrated in the thin side of the NWs. The width and the center frequency of the magnonic band associated with the above fundamental modes has been analyzed, showing that both can be tuned by varying the external applied field. Moreover, for the L-shaped NWs it is shown that there is also a second dispersive mode,at higher frequency,characterized by an amplitude concentrated in the thick side of the NW. These experimental results have been quantitatively reproduced by an original numerical model that includes two-dimensional Green's function of the dipole field of the dynamic magnetization and interlayer exchange coupling between the layers.

Explore related subjects

Keep this discovery

BibTeXRIS

G. Gubbiotti, S. Tacchi, M. Madami, G. Carlotti, Z. Yang, J. Ding, A. O. Adeyeye, M. Kostylev. 2016-04-27. Collective spin excitations in bi-component magnonic crystals consisting of bi-layer Permalloy/Fe nanowires. https://doi.org/10.1103/physrevb.93.184411

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Measuring chiral phonons

Chiral phonons are quantized vibrations where the atomic motion in a solid breaks improper rotation symmetries. In many cases, chiral phonons possess angular momenta and are therefore selective to circularly polarized light. Both fundamental and applied research efforts on chiral phonons have been gaining increasing attention owing to their importance in a variety of fields including spintronics, spin-selective chemical reactions, thermal transport, quantum information processing and biosensing, where the bi-directional spin-lattice coupling enabled by chiral phonons can be harnessed in new ways, and potentially lead to new functionalities. Thus far, the studies of chiral phonons across diverse materials platforms have evolved largely independently within these fields, but the experimental techniques are often interrelated. In this perspective, we present a detailed description, as well as advantages and disadvantages of the current approaches for experimentally measuring chiral phonons in chiral and achiral materials. We conclude with a discussion of new methods for measuring chiral phonons. Ultimately, this work seeks to offer an experimental guide for systematically investigating the properties of chiral phonons in various materials systems and applications.

cond-mat.mtrl-sci

A model of grain growth in UN integrating molecular dynamics, phase-field modeling, and uncertainty quantification

Grain growth kinetics and grain-boundary (GB) properties in uranium mononitride (UN) are investigated through an integrated multiscale framework combining molecular dynamics (MD), phase-field modeling, and surrogate-assisted uncertainty quantification. MD simulations yield GB energies for 27 symmetric tilt boundaries from 0--2000~K, which are consistent with available DFT values. The average GB energy is nearly temperature-independent below 1000~K and increases at higher temperatures. A mechanistic pore-drag model applied to the only available grain growth dataset for actinide nitrides yields a mobility reduction factor of $s \approx 0.93$--$0.99$, statistically indistinguishable from unity, confirming that pore drag is negligible under the experimental conditions. The intrinsic GB mobility is therefore extracted directly from the effective mobility, yielding $M_0 = 2.05\times10^{-15}$~m$^4$/(J$\cdot$s) and $Q_M = 0.89$~eV. Phase-field simulations conducted from 1500--2000~K confirm normal curvature-driven grain growth, with grain size distributions converging to the Hillert-like form. A surrogate-assisted global sensitivity analysis---combining principal component analysis, Gaussian process regression, and Sobol decomposition---reveals that the mobility prefactor $M_0$ dominates output variance at all times, followed by the activation energy $Q_M$, while the GB energy $\gamma$ contributes minimally. These results establish the first quantitative grain growth framework for UN and identify the reduction of uncertainty in $M_0$ and $Q_M$ as the highest-priority target for future experimental efforts.

cond-mat.mtrl-sci

Silicon Solar Cell Design for >30% Efficiency via Singlet Fission

Singlet fission (SF) materials convert high-energy photons into multiple charge carriers, providing a route to exceed the efficiency limits of single-junction silicon solar cells without many of the complexities of multi-junction tandem designs. Following the first demonstration of an SF-enhanced silicon solar cell in 2025, there is a need to understand how SF materials can be effectively integrated into high-efficiency industrial silicon devices and translated from proof of concept to a manufacturable technology. Using coupled optical and electrical simulations, we assess the efficiency potential of several industrially relevant silicon cell architectures combined with SF materials. Interdigitated back-contact (IBC) cells offer the greatest potential for improvement due to unrestricted front-surface access and can achieve efficiencies exceeding 33%. However, performance is highly sensitive to front-surface passivation quality. Appropriate silicon design, particularly controlled surface doping and fixed interfacial charge, can mitigate recombination losses and relax passivation requirements for ultra-thin exciton-transfer layers.

cond-mat.mtrl-sci