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arXiv · 1605.02757

Highly Non-linear and Reliable Amorphous Silicon Based Back-to-Back Schottky Diode as Selector Device for Large Scale RRAM Arrays

Cheng-Chih Hsieh·Yao-Feng Chang·Ying-Chen Chen·Heng-Lu Chang·Davood Shahrjerdi·Sanjay. K. Banerjee
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Abstract

In this work we present silicon process compatible, stable and reliable ($>10^{8}$cycles), high non-linearity ratio at half-read voltage ($>5\times 10^{5}$), high speed ($<60ns$) low operating voltage ($<2V$) back-to-back Schottky diodes. Materials choice of electrode, thickness of semiconductor layer and doping level are investigated by numerical simulation, experiments and current-voltage equations to give a general design consideration when back-to-back Schottky diodes are used as selector device for Resistive Random Access Memory(RRAM) arrays.

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Cheng-Chih Hsieh, Yao-Feng Chang, Ying-Chen Chen, Heng-Lu Chang, Davood Shahrjerdi, Sanjay. K. Banerjee. 2016-05-09. Highly Non-linear and Reliable Amorphous Silicon Based Back-to-Back Schottky Diode as Selector Device for Large Scale RRAM Arrays. https://arxiv.org/abs/1605.02757

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