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arXiv · 1605.03465

Influence of disordered edges on transport properties in graphene

D. Smirnov·G. Yu. Vasileva·J. C. Rode·C. Belke·Yu. B. Vasilyev·Yu. L. Ivanov·R. J. Haug
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Abstract

The influence of plasma etched sample edges on electrical transport and doping is studied. Through electrical transport measurements the overall doping and mobility are analyzed for mono- and bilayer graphene samples. As a result the edge contributes strongly to the overall doping of the samples. Furthermore the edge disorder can be found as the main limiting source of the mobility for narrow samples.

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D. Smirnov, G. Yu. Vasileva, J. C. Rode, C. Belke, Yu. B. Vasilyev, Yu. L. Ivanov, R. J. Haug. 2016-05-11. Influence of disordered edges on transport properties in graphene. https://arxiv.org/abs/1605.03465

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