Viable route towards large-area two dimensional MoS2 using magnetron sputtering

Hassana Samassekou; Asma Alkabsh; Milinda Wasala; Miller Eaton; Aaron Walber; Andrew Walker; Olli Pitkänen; Krisztian Kordas; Saikat Talapatra; Thushari Jayasekera; Dipanjan Mazumdar

arXiv · 1605.07568

Viable route towards large-area two dimensional MoS2 using magnetron sputtering

Hassana Samassekou·Asma Alkabsh·Milinda Wasala·Miller Eaton·Aaron Walber·Andrew Walker·Olli Pitkänen·Krisztian Kordas·Saikat Talapatra·Thushari Jayasekera·Dipanjan Mazumdar

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Abstract

Structural, interfacial, optical, and transport properties of large-area MoS2 ultra-thin films on BN-buffered silicon substrates fabricated using magnetron sputtering are investigated. A relatively simple growth strategy is demonstrated here that simultaneously promotes superior interfacial and bulk MoS2 properties. Few layers of MoS2 are established using X-ray reflectivity, diffraction, ellipsometry, and Raman spectroscopy measurements. Layer-specific modeling of optical constants shows very good agreement with first-principles calculations. Conductivity measurements reveal that few-layer MoS2 films are more conducting than many-layer films. Photo-conductivity measurements reveal that the sputter deposited MoS2 films compare favorably with other large-area methods. Our work illustrates that sputtering is a viable route for large-area device applications using transition metal dichalcogenides.

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Hassana Samassekou, Asma Alkabsh, Milinda Wasala, Miller Eaton, Aaron Walber, Andrew Walker, Olli Pitkänen, Krisztian Kordas, Saikat Talapatra, Thushari Jayasekera, Dipanjan Mazumdar. 2016-05-24. Viable route towards large-area two dimensional MoS2 using magnetron sputtering. https://arxiv.org/abs/1605.07568

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