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arXiv · 1605.08689

Schottky barrier and contact resistance of InSb nanowire field effect transistors

Dingxun Fan·N Kang·Sepideh Gorji Ghalamestani·Kimberly A Dick·H Q Xu
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Abstract

Understanding of the electrical contact properties of semiconductor nanowire (NW) field effect transistors (FETs) plays a crucial role in employing semiconducting NWs as building blocks for future nanoelectronic devices and in the study of fundamental physics problems. Here, we report on a study of the contact properties of Ti/Au, a widely used contact metal combination, to individual InSb NWs via both two-probe and four-probe transport measurements. We show that a Schottky barrier of height $Φ_{\rm{SB}}\sim20\ \rm{meV}$ is present at the metal-InSb NW interfaces and its effective height is gate tunable. The contact resistance ($R_{\rm{c}}$) in the InSb NWFETs is also analyzed by magnetotransport measurements at low temperatures. It is found that $R_{\rm{c}}$ at on-state exhibits a pronounced magnetic field dependent feature, namely it is increased strongly with increasing magnetic field after an onset field $B_{\rm{c}}$. A qualitative picture that takes into account magnetic depopulation of subbands in the NWs is provided to explain the observation. Our results provide a solid experimental evidence for the presence of a Schottky barrier at Ti/Au-InSb NW interfaces and can be used as a basis for design and fabrication of novel InSb NW based nanoelectronic devices and quantum devices.

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Dingxun Fan, N Kang, Sepideh Gorji Ghalamestani, Kimberly A Dick, H Q Xu. 2016-05-27. Schottky barrier and contact resistance of InSb nanowire field effect transistors. https://doi.org/10.1088/0957-4484%2F27%2F27%2F275204

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