Length Scale Dependence of Periodic Textures for Photoabsorption Enhancement in Ultra-thin Silicon Foils and Thick Wafers

K Kumar; A Khalatpour; G Liu; J Nogami; N P Kherani

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arXiv · 1606.01834

Length Scale Dependence of Periodic Textures for Photoabsorption Enhancement in Ultra-thin Silicon Foils and Thick Wafers

K Kumar·A Khalatpour·G Liu·J Nogami·N P Kherani

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Abstract

In this paper, we simulate a front surface inverted pyramidal grating texture on 2 to 400 micron thick silicon and optimize it to derive maximum photocurrent density from the cell. We identify a one size fits all front grating period of 1000 nm that leads to maximum photo-absorption of normally incident AM1.5g solar spectrum in silicon (configured with a back surface reflector) irrespective of the thickness of the crystalline silicon absorbing layer. With the identification of such universally optimized periodicity for the case of an inverted pyramidal grating texture, a common fabrication process can be designed to manufacture high-efficiency devices on crystalline silicon regardless of wafer thickness. In order to validate the results of the simulation, we fabricated high resolution inverted pyramidal textures on a 400 micron thick silicon wafer with electron beam lithography to compare the reflectance from submicron and wavelength scale periodic textures. The experimental reflectance measurements on textures confirm that a 1000 nm period grating texture performs better than a 500 nm period texture in reducing reflectance, in agreement with the simulations.

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K Kumar, A Khalatpour, G Liu, J Nogami, N P Kherani. 2016-06-06. Length Scale Dependence of Periodic Textures for Photoabsorption Enhancement in Ultra-thin Silicon Foils and Thick Wafers. https://arxiv.org/abs/1606.01834

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