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arXiv · 1607.02612

Resonant optical gating of suspended carbon nanotube transistor

Robert McCoy·Fredrick Anderson·Eric L. Carter·Robinson L. Smith
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Abstract

Building smaller transistors with enhanced functionality is critical in extending the limits of Moores law and meeting the demands of the electronics industry. Here we demonstrate transistor operation in a suspended single carbon nanotube (CNT) using feedback-enabled radiation pressure of a near-field focused laser that enabled significant changes in conductivity of the CNT. Further, using in-situ tip-enhanced Raman spectroscopy, we show that the change in conductivity of over five orders in magnitude is accompanied by self-induced defect states within the CNT. The entire structure is less than 10 nm in dimension and shows promise of scalability. This is a novel method for achieving logic operations at the nanoscale.

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Robert McCoy, Fredrick Anderson, Eric L. Carter, Robinson L. Smith. 2016-07-09. Resonant optical gating of suspended carbon nanotube transistor. https://arxiv.org/abs/1607.02612

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