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arXiv · 1607.06193

First-principles DFT + GW study of the Te antisite in CdTe

Mauricio A. Flores·Eduardo Menéndez-Proupin·Walter Orellana
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Abstract

Formation energies, charge transitions levels, and quasiparticle defect states of the tellurium antisite $(\text{Te}_\text{Cd})$ in CdTe are addressed within the DFT${0.05cm}+{0.05cm}$\emph{GW} formalism. We find that $(\text{Te}_\text{Cd})$ induces a (+2/0) deep level at 0.99 eV above the valence band maximum, exhibiting a negative-U effect. Moreover, the calculated zero-phonon line for the excited state of $(\text{Te}_\text{Cd})^0$ corresponds closely with the $\sim$1.1 eV band, visible in luminescence and absorption experiments. Our results differ from previous theoretical studies, mainly due to the well-known band gap error and the incorrect position of the band edges predicted by standard DFT calculations.

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Mauricio A. Flores, Eduardo Menéndez-Proupin, Walter Orellana. 2016-07-21. First-principles DFT + GW study of the Te antisite in CdTe. https://doi.org/10.1016/j.commatsci.2016.08.044

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