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arXiv · 1607.06405

Effect of annealing on the interfacial Dzyaloshinskii-Moriya interaction in Ta/CoFeB/MgO trilayers

R. A. Khan·P. M. Shepley·A. Hrabec·A. W. J. Wells·B. Ocker·C. H. Marrows·T. A. Moore
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Abstract

The interfacial Dzyaloshinskii-Moriya interaction (DMI) has been shown to stabilize homochiral N\'eel-type domain walls in thin films with perpendicular magnetic anisotropy and as a result permit them to be propagated by a spin Hall torque. In this study, we demonstrate that in Ta/Co$_{20}$Fe$_{60}$B$_{20}$/MgO the DMI may be influenced by annealing. We find that the DMI peaks at $D=0.057\pm0.003$ mJ/m$^{2}$ at an annealing temperature of 230 $^{\circ}$C. DMI fields were measured using a purely field-driven creep regime domain expansion technique. The DMI field and the anisotropy field follow a similar trend as a function of annealing temperature. We infer that the behavior of the DMI and the anisotropy are related to interfacial crystal ordering and B expulsion out of the CoFeB layer as the annealing temperature is increased.

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R. A. Khan, P. M. Shepley, A. Hrabec, A. W. J. Wells, B. Ocker, C. H. Marrows, T. A. Moore. 2016-07-21. Effect of annealing on the interfacial Dzyaloshinskii-Moriya interaction in Ta/CoFeB/MgO trilayers. https://doi.org/10.1063/1.4963731

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