arXiv · 1607.08210
Circularly polarized lasing in chiral modulated semiconductor microcavity with GaAs quantum wells
Abstract
We report the elliptically, close to circularly polarized lasing at $\hbar\omega = 1.473$ and 1.522 eV from an AlAs/AlGaAs Bragg microcavity with 12 GaAs quantum wells in the active region and chiral-etched upper distributed Bragg refractor under optical pump at room temperature. The advantage of using the chiral photonic crystal with a large contrast of dielectric permittivities is its giant optical activity, allowing to fabricate a very thin half-wave plate, with a thickness of the order of the emitted light wavelength, and to realize the monolithic control of circular polarization.
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A. A. Demenev, V. D. Kulakovskii, C. Schneider, S. Brodbeck, M. Kamp, S. Höfling, S. V. Lobanov, T. Weiss, N. A. Gippius, S. G. Tikhodeev. 2016-07-27. Circularly polarized lasing in chiral modulated semiconductor microcavity with GaAs quantum wells. https://doi.org/10.1063/1.4966279
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