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arXiv · 1608.07894

Surface-gate-defined single-electron-transistor in a MoS$_{2}$ bilayer

M. Javaid·Daniel W. Drumm·Salvy P. Russo·Andrew D. Greentree
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Abstract

We report the multi-scale modeling and design of a gate-defined single-electron transistor in a MoS$_{2}$ bilayer. By combining density-functional theory and finite-element analysis, we design a surface gate structure to electrostatically define and tune a quantum dot and its associated tunnel barriers in the MoS$_{2}$ bilayer. Our approach suggests new pathways for the creation of novel quantum electronic devices in two-dimensional materials.

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M. Javaid, Daniel W. Drumm, Salvy P. Russo, Andrew D. Greentree. 2016-08-29. Surface-gate-defined single-electron-transistor in a MoS$_{2}$ bilayer. https://doi.org/10.1088/1361-6528%2Faa5ce0

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