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arXiv · 1609.03918

Selective Purcell enhancement of two closely linked zero-phonon transitions of a silicon carbide color center

David O. Bracher·Xingyu Zhang·Evelyn L. Hu
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Abstract

Point defects in silicon carbide are rapidly becoming a platform of great interest for single photon generation, quantum sensing, and quantum information science. Photonic crystal cavities (PCC) can serve as an efficient light-matter interface both to augment the defect emission and to aid in studying the defects' properties. In this work, we fabricate 1D nanobeam PCCs in 4H-silicon carbide with embedded silicon vacancy centers. These cavities are used to achieve Purcell enhancement of two closely spaced defect zero-phonon lines (ZPL). Enhancements of >80-fold are measured using multiple techniques. Additionally, the nature of the cavity coupling to the different ZPLs is examined.

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David O. Bracher, Xingyu Zhang, Evelyn L. Hu. 2016-09-13. Selective Purcell enhancement of two closely linked zero-phonon transitions of a silicon carbide color center. https://doi.org/10.1073/pnas.1704219114

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