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arXiv · 1610.02699

Physical properties of KMgBi single crystals

Xiao Zhang·Shanshan Sun·Hechang Lei
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Abstract

KMgBi single crystals are grown by using the Bi flux successfully. KMgBi shows semiconducting behavior with a metal-semiconductor transition at high temperature region and a resistivity plateau at low temperature region, suggesting KMgBi could be a topological insulator with a very small band gap. Moreover, KMgBi exhibits multiband feature with strong temperature dependence of carrier concentrations and mobilities.

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Xiao Zhang, Shanshan Sun, Hechang Lei. 2016-10-09. Physical properties of KMgBi single crystals. https://doi.org/10.1103/physrevb.95.035209

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