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arXiv · 1610.03699

Band Offset in (Ga,In)As/Ga(As,Sb) Heterostructures

S. Gies·M. J. Weseloh·C. Fuchs·W. Stolz·J. Hader·J. V. Moloney·S. W. Koch·W. Heimbrodt
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Abstract

A series of (Ga,In)As/GaAs/Ga(As,Sb) multi-quantum well heterostructures is analyzed using temperature- and power-dependent photoluminescence (PL) spectroscopy. Pronounced PL variations with sample temperature are observed and analyzed using microscopic many-body theory and band structure calculations based on the k$\cdot$p method. This theory-experiment comparison reveals an unusual, temperature dependent variation of the band alignment between the (Ga,In)As and Ga(As,Sb) quantum wells.

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S. Gies, M. J. Weseloh, C. Fuchs, W. Stolz, J. Hader, J. V. Moloney, S. W. Koch, W. Heimbrodt. 2016-10-12. Band Offset in (Ga,In)As/Ga(As,Sb) Heterostructures. https://doi.org/10.1063/1.4968541

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