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arXiv · 1610.07792

Interlayer current near the edge of an InAs/GaSb double quantum well in proximity with a superconductor

A. Kononov·S. V. Egorov·N. Titova·B. R. Semyagin·V. V. Preobrazhenskii·M. A. Putyato·E. A. Emelyanov·E. V. Deviatov
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Abstract

We investigate charge transport through the junction between a niobium superconductor and the edge of a two-dimensional electron-hole bilayer, realized in an InAs/GaSb double quantum well. For the transparent interface with a superconductor, we demonstrate that the junction resistance is determined by the interlayer charge transfer near the interface. From an analysis of experimental $I-V$ curves we conclude that the proximity induced superconductivity efficiently couples electron and hole layers at low currents. The critical current demonstrates periodic dependence on the in-plane magnetic field, while it is monotonous for the field which is normal to the bilayer plane.

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A. Kononov, S. V. Egorov, N. Titova, B. R. Semyagin, V. V. Preobrazhenskii, M. A. Putyato, E. A. Emelyanov, E. V. Deviatov. 2016-10-25. Interlayer current near the edge of an InAs/GaSb double quantum well in proximity with a superconductor. https://doi.org/10.1134/s0021364017080057

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