Searcharxiv⌕ Search
Home/Archive/arXiv

arXiv · 1611.03582

Rashba-Dirac cones at the tungsten surface: Insights from a tight-binding model and thin film subband structure

George Kirczenow
View original source ↗Read source document ↗Export metadata ↓

Abstract

A tight-binding model of bcc tungsten that includes spin-orbit coupling is developed and applied to the surface states of (110) tungsten thin films. The model describes accurately the anisotropic Dirac cone-like dispersion and Rashba-like spin polarization of the surface states, including the crucial effect of the relaxation of the surface atomic layer of the tungsten towards the bulk. It is shown that the surface relaxation affects the tungsten surface states because it results in increased overlaps between atomic orbitals of the surface atomic layer and nearby layers whereas electric fields that are due to charge transfer between the tungsten and the vacuum near the surface or between the bulk and surface layers do not significantly affect the Rashba-Dirac surface states. It is found that hybridization with bulk modes has differing strengths for thin film surface states belonging to the upper and lower Rashba-Dirac cones and results in $reversal$ of the directions of travel of spin $\uparrow$ and $\downarrow$ electrons in most of the upper Rashba-Dirac cone relative to those expected from phenomenology. It is also shown that intrasite (not intersite) matrix elements of the spin-orbit Hamiltonian are primarily responsible for the formation of the Rashba-Dirac cones, and their spin polarization. This finding should be considered when modeling topological insulators, the spin Hall effect and related phenomena.

Explore related subjects

cond-mat.mes-hall

Keep this discovery

BibTeXRIS

George Kirczenow. 2016-11-11. Rashba-Dirac cones at the tungsten surface: Insights from a tight-binding model and thin film subband structure. https://doi.org/10.1103/physrevb.94.205414

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

arXiv2026

Emergence of spin-orbit coupling among spin, atomic orbital, and Bloch dynamics in Janus double-transition-metal MXenes

We found a spin-orbit coupling to cause a simultaneous correlation among three degrees of freedom, the electronic spin, orbital, and Bloch dynamics in an investigation into the electronic structure of Janus double-transition-metal MXenes, Mo$_2$HfC$_2$OS and W$_2$HfC$_2$OS. In this paper, it is also revealed that the spin-orbit coupling causes a staggered spin configuration with a trigonal pattern around the $\Gamma$ point near the insulating gap. We developed a reduced Hamiltonian describing the electronic states and show that the spin-orbit coupling cannot be equated with conventional forms for a single electron in solids, LS, Rashba, and Dresselhaus couplings, even in the approximation under the low-energy and small wave number condition. Because of the intrinsic shape of the conduction band, a trigonally alternating spin-momentum locking emerges with the spin axis perpendicular to the layer plane. The theoretical analysis shows that these Janus materials can provide a platform for exploring the spin-related phenomena due to the trigonal spin-momentum locking other than Rashba and Dresselhaus types.

cond-mat.mes-hall↗
arXiv2026

A substrate booster for P-type 2D ferromagnetic semiconductor

Spin transistors with its both charge and spin properties tuned via electrostatic gating are believed capable for widespread use, which however have proven challenging due to the extreme rareness of their physical base -- magnetic semiconductors. The latter are limited within very few systems including diluted magnetic semiconductors (DMS) and two-dimensional ferromagnetic semiconductors (2D-FMS), and known to suffer from inadequate gate-tunability of their electric and/or magnetic properties. Here, we show a substrate engineering paradigm by interfacing few-layered Cr$_{2}$Ge$_{2}$Te$_{6}$ (FL-CGT) with an antiferromagnetic insulator CrOCl. Owing to the subtle interfacial charge transfer couplings, CGT can be drastically turned from an ambipolar semiconductor into a high performance P-type semiconductor. When cooled below the Curie temperature, the ON-OFF ratio in such substrate-boosted FMS field-effect transistor (FET) reaches 10$^{5}$ with its coercive field $H_{c}$ of magnetic hysteresis loop tunable by a factor of more than 200$\%$, enabling {gate-assisted magnetic switching in the prototype semiconducting spin transistor architecture}. A crossover from critical power-law scaling to a dual power-law behaviour under heavy hole doping was further observed. Our findings {signify} an efficient interfacial charge transfer and electrically modulated magnetic anisotropy energy supported by calculations. This high performance P-type FMS-FET system suggests that active substrate-boosting paradigm might be a powerful path for the investigation of future gate-tunable spintronic devices.

cond-mat.mes-hall↗
arXiv2026

In-plane magnetic field control of anomalous Hall response enabled by magnetic anisotropy engineering

Engineering magnetic anisotropy provides a powerful route to control magnetization orientation and unlock emerging functionalities in opto-spintronic and current-driven devices. Beyond its role in magnetization reversal, the effective anisotropy can strongly influence the magnetotransport response, offering an additional degree of freedom to tune new device functionalities. In this work, we report a magnetotransport study of a ferrimagnetic [Tb/Co]$_{\times 5}$ multilayer grown with a Tb thickness gradient, whose wedge-shaped tilts the uniaxial anisotropy axis slightly away from the film normal. Anomalous Hall resistivity measurements from 80 K to 300 K reveal a spin reorientation transition, while the angular dependence of the magnetotransport responses exposes the crucial role of the tilted anisotropy. A simplified macrospin model reproduces the full angular response across the transition and shows that the observed anomalous Hall effect when the in-plane magnetic field is applied originates from the tilt of the uniaxial anisotropy axis, which supplies a built-in symmetry-breaking mechanism, enabling in-plane field control over the out-of-plane anomalous Hall response, sign included. These findings establish tilted magnetic anisotropy as a promising route toward Hall effect-based sensor applications and highlight Tb/Co multilayers as a versatile platform for anisotropy-engineered spintronic devices.

cond-mat.mes-hall↗