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arXiv · 1611.08179

Puddle-induced resistance oscillations in the breakdown of the graphene quantum Hall effect

M. Yang·O. Couturaud·W. Desrat·C. Consejo·D. Kazazis·R. Yakimova·M. Syväjärvi·M. Goiran·J. Béard·P. Frings·M. Pierre·A. Cresti·W. Escoffier·B. Jouault
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Abstract

We report on the stability of the quantum Hall plateau in wide Hall bars made from a chemically gated graphene film grown on SiC. The $\nu=2$ quantized plateau appears from fields $B \simeq 5$ T and persists up to $B \simeq 80$ T. At high current density, in the breakdown regime, the longitudinal resistance oscillates with a $1/B$ periodicity and an anomalous phase, which we relate to the presence of additional electron reservoirs. The high field experimental data suggest that these reservoirs induce a continuous increase of the carrier density up to the highest available magnetic field, thus enlarging the quantum plateaus. These in-plane inhomogeneities, in the form of high carrier density graphene pockets, modulate the quantum Hall effect breakdown and decrease the breakdown current.

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M. Yang, O. Couturaud, W. Desrat, C. Consejo, D. Kazazis, R. Yakimova, M. Syväjärvi, M. Goiran, J. Béard, P. Frings, M. Pierre, A. Cresti, W. Escoffier, B. Jouault. 2016-11-24. Puddle-induced resistance oscillations in the breakdown of the graphene quantum Hall effect. https://doi.org/10.1103/physrevlett.117.237702

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