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arXiv · 1611.10113

Precision calculation of energy levels for four-valent Si I

R. T. Imanbaeva·M. G. Kozlov·E. A. Konovalova
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Abstract

We report results of the calculation of the low-lying levels of neutral Si using a combination of the configuration interaction and many-body perturbation theory (CI+MBPT method). We treat Si I as an atom with four valence electrons and use two different starting approximations, namely $V^{N-2}$ and $V^{N-4}$. We conclude that both approximations provide comparable accuracy, on the level of 1%.

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R. T. Imanbaeva, M. G. Kozlov, E. A. Konovalova. 2016-11-30. Precision calculation of energy levels for four-valent Si I. https://doi.org/10.1140/epjd%2Fe2017-70718-5

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