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arXiv · 1612.03781

Anisotropic crystallization in solution processed chalcogenide thin film by linearly polarized laser

Tingyi Gu·Hyuncheol Jeong·Kengran Yang·Fan Wu·Nan Yao·Rodney D. Priestley·Claire E. White·Craig B. Arnold
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Abstract

The low activation energy associated with amorphous chalcogenide structures offers broad tunability of material properties with laser-based or thermal processing. In this paper, we study near-bandgap laser induced anisotropic crystallization in solution processed arsenic sulfide. The modified electronic bandtail states associated with laser irritation lead to a distinctive photoluminescence spectrum, compared to thermally annealed amorphous glass. Laser crystalized materials exhibit a periodic subwavelength ripples structure in transmission electron microscopy experiments and show polarization dependent photoluminescence. Analysis of the local atomic structure of these materials using laboratory-based X-ray pair distribution function analysis indicates that laser irradiation causes a slight rearrangement at the atomic length scale, with a small percentage of S-S homopolar bonds converting to As-S heteropolar bonds. These results highlight fundamental differences between laser and thermal processing in this important class of materials.

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Tingyi Gu, Hyuncheol Jeong, Kengran Yang, Fan Wu, Nan Yao, Rodney D. Priestley, Claire E. White, Craig B. Arnold. 2016-12-12. Anisotropic crystallization in solution processed chalcogenide thin film by linearly polarized laser. https://doi.org/10.1063/1.4975067

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