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arXiv · 1612.06463

Nanosecond magnetization dynamics during spin Hall switching of in-plane magnetic tunnel junctions

Graham E. Rowlands·Sriharsha V. Aradhya·Shengjie Shi·Erin H. Yandel·Junseok Oh·Daniel C. Ralph·Robert A. Buhrman
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Abstract

We present a study of the magnetic dynamics associated with nanosecond scale magnetic switching driven by the spin Hall effect in 3-terminal nanoscale magnetic tunnel junctions (3T-MTJs) with in-plane magnetization. Utilizing fast pulse measurements in a variety of material stacks and detailed micromagnetic simulations, we demonstrate that this unexpectedly fast and reliable magnetic reversal is facilitated by the self-generated Oersted field, and the short-pulse energy efficiency can be substantially enhanced by micromagnetic curvature in the magnetic free layer. The sign of the Oersted field is essential for this enhancement --- in simulations in which we artificially impose a field-like torque with a sign opposite to the effect of the Oersted field, the result is a much slower and stochastic switching process that is reminiscent of the so-called incubation delay in conventional 2-terminal spin-torque-switched MTJs.

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Graham E. Rowlands, Sriharsha V. Aradhya, Shengjie Shi, Erin H. Yandel, Junseok Oh, Daniel C. Ralph, Robert A. Buhrman. 2016-12-20. Nanosecond magnetization dynamics during spin Hall switching of in-plane magnetic tunnel junctions. https://doi.org/10.1063/1.4978661

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