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arXiv · 1612.08409

A double quantum dot memristor

Ying Li·Gregory W. Holloway·Simon C. Benjamin·G. Andrew D. Briggs·Jonathan Baugh·Jan A. Mol
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Abstract

Memristive systems are generalisations of memristors, which are resistors with memory. In this paper, we present a quantum description of memristive systems. Using this model we propose and experimentally demonstrate a simple and practical scheme for realising memristive systems with quantum dots. The approach harnesses a phenomenon that is commonly seen as a bane of nanoelectronics, i.e. switching of a trapped charge in the vicinity of the device. We show that quantum-dot memristive systems have hysteresis current-voltage characteristics and quantum jump induced stochastic behaviour. Realising such a quantum memristor completes the menu of components for quantum circuit design.

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Ying Li, Gregory W. Holloway, Simon C. Benjamin, G. Andrew D. Briggs, Jonathan Baugh, Jan A. Mol. 2017-09-08. A double quantum dot memristor. https://doi.org/10.1103/physrevb.96.075446

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