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arXiv · 1701.01784

Spatially uniform resistance switching of low current, high endurance titanium-niobium-oxide memristors

Suhas Kumar·Noraica Davila·Ziwen Wang·Xiaopeng Huang·John Paul Strachan·David Vine·A. L. David Kilcoyne·Yoshio Nishi·R. Stanley Williams
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Abstract

We analyzed micrometer-scale titanium-niobium-oxide prototype memristors, which exhibited low write-power (<3 {\mu}W) and energy (<200 fJ/bit/{\mu}m2), low read-power (~nW), and high endurance (>millions of cycles). To understand their physico-chemical operating mechanisms, we performed in-operando synchrotron x-ray transmission nanoscale spectromicroscopy using an ultra-sensitive time-multiplexed technique. We observed only spatially uniform material changes during cell operation, in sharp contrast to the frequently detected formation of a localized conduction channel in transition-metal-oxide memristors. We also associated the response of assigned spectral features distinctly to non-volatile storage (resistance change) and writing of information (application of voltage and Joule heating). These results provide critical insights into high-performance memristors that will aid in device design, scaling and predictive circuit-modeling, all of which are essential for the widespread deployment of successful memristor applications.

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Suhas Kumar, Noraica Davila, Ziwen Wang, Xiaopeng Huang, John Paul Strachan, David Vine, A. L. David Kilcoyne, Yoshio Nishi, R. Stanley Williams. 2017-01-07. Spatially uniform resistance switching of low current, high endurance titanium-niobium-oxide memristors. https://doi.org/10.1039/c6nr07671h

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