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arXiv · 1702.05665

Built-in Homojunction Dominated Intrinsically Rectifying-Resistive Switching in NiO Nanodots for Selection Device-Free Memory Application

Zhong Sun·Linlin Wei·Ce Feng·Peixian Miao·Meiqi Guo·Huaixin Yang·Jianqi Li·Yonggang Zhao
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Abstract

The intrinsically rectifying-resistive switching (IR-RS) has been regarded as an effective way to address the crosstalk issue, due to the Schottky diodes formed at the metal/oxide interfaces in the ON states to suppress the sneak current at reverse biases. In this letter, we report for the first time another type of IR-RS that is related to the built-in homojunction. The IR-RS study was usually limited to macroscopic samples with micron-order pad-type electrodes, while this work is on NiO nanodots fabricated with ultrathin anodic-aluminum-oxide templates and acting as nanoscaled analogs of real devices. The NiO nanodots show high storage density and high uniformity, and the IR-RS behaviors are of good device performances in terms of retention, endurance, switching ratio and rectification ratio. The feasibility of the IR-RS for selection device-free memory application has been demonstrated, by calculating the maximum crossbar array size under the worst-case scenario to be 3 Mbit.

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Zhong Sun, Linlin Wei, Ce Feng, Peixian Miao, Meiqi Guo, Huaixin Yang, Jianqi Li, Yonggang Zhao. 2017-01-29. Built-in Homojunction Dominated Intrinsically Rectifying-Resistive Switching in NiO Nanodots for Selection Device-Free Memory Application. https://arxiv.org/abs/1702.05665

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