Description of statistical switching in perpendicular STT-MRAM within an analytical and numerical micromagnetic framework

Giulio Siracusano; Riccardo Tomasello; Massimiliano d'Aquino; Vito Puliafito; Anna Giordano; Bruno Azzerboni; Pat Braganca; Giovanni Finocchio; Mario Carpentieri

arXiv · 1702.07739

Description of statistical switching in perpendicular STT-MRAM within an analytical and numerical micromagnetic framework

Giulio Siracusano·Riccardo Tomasello·Massimiliano d'Aquino·Vito Puliafito·Anna Giordano·Bruno Azzerboni·Pat Braganca·Giovanni Finocchio·Mario Carpentieri

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Abstract

The realistic modeling of STT-MRAM for the simulations of hybrid CMOS/Spintronics devices in comprehensive simulation environments require a full description of stochastic switching processes in state of the art STT-MRAM. Here, we derive an analytical formulation that takes into account the spin-torque asymmetry of the spin polarization function of magnetic tunnel junctions studying. We studied its validity range by comparing the analytical formulas with results achieved numerically within a full micromagnetic framework. We also find that a reasonable fit of the probability density function (PDF) of the switching time is given by a Pearson Type IV PDF. The main results of this work underlines the need of data-driven design of STT-MRAM that uses a full micromagnetic simulation framework for the statistical proprieties PDF of switching processes.

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Giulio Siracusano, Riccardo Tomasello, Massimiliano d'Aquino, Vito Puliafito, Anna Giordano, Bruno Azzerboni, Pat Braganca, Giovanni Finocchio, Mario Carpentieri. 2017-02-24. Description of statistical switching in perpendicular STT-MRAM within an analytical and numerical micromagnetic framework. https://arxiv.org/abs/1702.07739

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