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arXiv · 1702.07871

Selective reflection from Rb layer with thickness below $λ$/12 and applications

Armen Sargsyan·Aram Papoyan·Ifan G. Hughes·Charles S. Adams·David Sarkisyan
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Abstract

We have studied the peculiarities of selective reflection from Rb vapor cell with thickness $L <$ 70 nm, which is over an order of magnitude smaller than the resonant wavelength for Rb atomic D$_1$ line $λ$ = 795 nm. A huge ($\approx$ 240 MHz) red shift and spectral broadening of reflection signal is recorded for $L =$ 40 nm caused by the atom-surface interaction. Also completely frequency resolved hyperfine Paschen-Back splitting of atomic transitions to four components for $^{87}$Rb and six components for $^{85}$Rb is recorded in strong magnetic field ($B >$ 2 kG).

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Armen Sargsyan, Aram Papoyan, Ifan G. Hughes, Charles S. Adams, David Sarkisyan. 2017-02-25. Selective reflection from Rb layer with thickness below $λ$/12 and applications. https://doi.org/10.1364/ol.42.001476

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