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arXiv · 1703.04795

Thermal-error regime in high-accuracy gigahertz single-electron pumping

R. Zhao·A. Rossi·S. P. Giblin·J. D. Fletcher·F. E. Hudson·M. Möttönen·M. Kataoka·A. S. Dzurak
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Abstract

Single-electron pumps based on semiconductor quantum dots are promising candidates for the emerging quantum standard of electrical current. They can transfer discrete charges with part-per-million (ppm) precision in nanosecond time scales. Here, we employ a metal-oxide-semiconductor silicon quantum dot to experimentally demonstrate high-accuracy gigahertz single-electron pumping in the regime where the number of electrons trapped in the dot is determined by the thermal distribution in the reservoir leads. In a measurement with traceability to primary voltage and resistance standards, the averaged pump current over the quantized plateau, driven by a \mbox{$1$-GHz} sinusoidal wave in the absence of magnetic field, is equal to the ideal value of $ef$ within a measurement uncertainty as low as $0.27$~ppm.

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R. Zhao, A. Rossi, S. P. Giblin, J. D. Fletcher, F. E. Hudson, M. Möttönen, M. Kataoka, A. S. Dzurak. 2017-11-13. Thermal-error regime in high-accuracy gigahertz single-electron pumping. https://doi.org/10.1103/physrevapplied.8.044021

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