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arXiv · 1703.06835

Optimized spin-injection efficiency and spin MOSFET operation based on low-barrier ferromagnet/insulator/n-Si tunnel contact

Yang Yang·Zhenhua Wu·Wen Yang·Jun Li·Songyan Chen·Cheng Li
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Abstract

We theoretically investigate the spin injection in different FM/I/n-Si tunnel contacts by using the lattice NEGF method. We find that the tunnel contacts with low barrier materials such as TiO$_2$ and Ta$_{2}$O$_{5}$, have much lower resistances than the conventional barrier materials, resulting in a wider and attainable optimum parameters window for improving the spin injection efficiency and MR ratio of a vertical spin MOSFET. Additionally, we find the spin asymmetry coefficient of TiO$_2$ tunnel contact has a negative value, while that of Ta$_{2}$O$_{5}$ contact can be tuned between positive and negative values, by changing the parameters.

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Yang Yang, Zhenhua Wu, Wen Yang, Jun Li, Songyan Chen, Cheng Li. 2017-05-03. Optimized spin-injection efficiency and spin MOSFET operation based on low-barrier ferromagnet/insulator/n-Si tunnel contact. https://doi.org/10.7567/apex.10.063001

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