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arXiv · 1703.07788

Spin-orbit coupling induced two-electron relaxation in silicon donor pairs

Yang Song·S. Das Sarma
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Abstract

We unravel theoretically a key intrinsic relaxation mechanism among the low-lying singlet and triplet donor-pair states in silicon, an important element in the fast-developing field of spintronics and quantum computation. Despite the perceived weak spin-orbit coupling (SOC) in Si, we find that our discovered relaxation mechanism, combined with the electron-phonon and inter-donor interactions, dominantly drives the transitions in the two-electron states over a large range of donor coupling regime. The scaling of the relaxation rate with inter-donor exchange interaction $J$ goes from $J^5$ to $J^4$ at the low to high temperature limits. Our analytical study draws on the symmetry analysis over combined band, donor envelope and valley configurations. It uncovers naturally the dependence on the donor-alignment direction and triplet spin orientation, and especially on the dominant SOC source from donor impurities. While a magnetic field is not necessary for this relaxation, unlike in the single-donor spin relaxation, we discuss the crossover behavior with increasing Zeeman energy in order to facilitate comparison with experiments.

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Yang Song, S. Das Sarma. 2017-09-25. Spin-orbit coupling induced two-electron relaxation in silicon donor pairs. https://doi.org/10.1103/physrevb.96.115444

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