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arXiv · 1703.08405

Gate control of the spin mobility through the modification of the spin-orbit interaction in two-dimensional systems

M. Luengo-Kovac·F. C. D. Moraes·G. J. Ferreira·A. S. L. Ribeiro·G. M. Gusev·A. K. Bakarov·V. Sih·F. G. G. Hernandez
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Abstract

Spin drag measurements were performed in a two-dimensional electron system set close to the crossed spin helix regime and coupled by strong intersubband scattering. In a sample with uncommon combination of long spin lifetime and high charge mobility, the drift transport allows us to determine the spin-orbit field and the spin mobility anisotropies. We used a random walk model to describe the system dynamics and found excellent agreement for the Rashba and Dresselhaus couplings. The proposed two-subband system displays a large tuning lever arm for the Rashba constant with gate voltage, which provides a new path towards a spin transistor. Furthermore, the data shows large spin mobility controlled by the spin-orbit constants setting the field along the direction perpendicular to the drift velocity. This work directly reveals the resistance experienced in the transport of a spin-polarized packet as a function of the strength of anisotropic spin-orbit fields.

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M. Luengo-Kovac, F. C. D. Moraes, G. J. Ferreira, A. S. L. Ribeiro, G. M. Gusev, A. K. Bakarov, V. Sih, F. G. G. Hernandez. 2017-03-24. Gate control of the spin mobility through the modification of the spin-orbit interaction in two-dimensional systems. https://doi.org/10.1103/physrevb.95.245315

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