Topological Anderson insulator phase in a Dirac-semimetal thin film

Abstract

The recently discovered topological Dirac semimetal represents a new exotic quantum state of matter. Topological Dirac semimetals can be viewed as three dimensional analogues of graphene, in which the Dirac nodes are protected by crystalline symmetry. It has been found that quantum confinement effect can gap out Dirac nodes and convert Dirac semimetal to a band insulator. The band insulator is either normal insulator or quantum spin Hall insulator depending on the thin film thickness. We present the study of disorder effects in thin film of Dirac semimetals. It is found that moderate Anderson disorder strength can drive a topological phase transition from normal band insulator to topological Anderson insulator in Dirac semimetal thin film. The numerical calculation based on the model parameters of Dirac semimetal Na$_{3}$Bi shows that in the topological Anderson insulator phase a quantized conductance plateau occurs in the bulk gap of band insulator, and the distributions of local currents further confirm that the quantized conductance plateau arises from the helical edge states induced by disorder. Finally, an effective medium theory based on Born approximation fits the numerical data.