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arXiv · 1703.10298

Spatially resolved, energy-filtered imaging of core level and valence band photoemission of highly p and n doped silicon patterns

N Barrett·L F Zagonel·O Renault·A Bailly
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Abstract

An accurate description of spatial variations in the energy levels of patterned semiconductor substrates on the micron and sub-micron scale as a function of local doping is an important technological challenge for the microelectronics industry. Spatially resolved surface analysis by photoelectron spectromicroscopy can provide an invaluable contribution thanks to the relatively non-destructive, quantitative analysis. We present results on highly doped n and p type patterns on, respectively, p and n type silicon substrates. Using synchrotron radiation and spherical aberration-corrected energy filtering, we have obtained a spectroscopic image series at the Si 2p core level and across the valence band. Local band alignments are extracted, accounting for doping, band bending and surface photovoltage.

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N Barrett, L F Zagonel, O Renault, A Bailly. 2017-03-30. Spatially resolved, energy-filtered imaging of core level and valence band photoemission of highly p and n doped silicon patterns. https://doi.org/10.1088/0953-8984%2F21%2F31%2F314015

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